Room‐Temperature Multiferroicity and Magnetization Dynamics in Fe/BTO/LSMO Tunnel Junction

This article describes the static, dynamic, and temperature dependent magneto-transport properties of Fe/BTO/LSMO mutliferroic tunnel junction (MFTJ). The multilayer structure is grown on a high quality crystalline STO substrate by means pulsed laser deposition, which enables epitaxial layer-by-layer growth. MFTJ patterned into micrometer-size devices ion-etching-free lithography process ensuring that oxide layers are preserved after device fabrication. measured static indicate has multiferroic at room with tunneling electroresistance (TER) magnetoresistance (TMR) reaching 270% 0.4%, respectively. measurements exponentially decreasing dependence TMR increasing temperature, whereas TER independent. electric ferromagnetic resonance based spin-diode effect shows existence two peaks, from both ferromagentic electrodes, one identified as LSMO-derived characterized low magnetization damping α = 0.002 other Fe.